Progress in efficient doping of high aluminum-containing group III-nitrides
Author:
Affiliation:
1. Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5009349
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1. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
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