Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak-Reference-Cited by-同舟云学术

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

Published:2004-11-29 Issue:22 Volume:85 Page:5143-5145
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chakraborty Arpan,Haskell B. A.,Keller S.,Speck J. S.,DenBaars S. P.,Nakamura S.,Mishra U. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1825612

Reference16 articles.

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2. GaN: Processing, defects, and devices

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4. Electric field dependence of optical absorption near the band gap of quantum-well structures

5. Spontaneous polarization and piezoelectric constants of III-V nitrides

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