Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire-Reference-Cited by-同舟云学术

Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire

Published:2019-03-14 Issue:5 Volume:256 Page:1800371
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Orlova Marina¹,Abdullaev Oleg²,Mezhenny Michail²,Chelny Alexander²,Savchuk Alexander¹,Ermoshin Ivan¹,Rabinovich Oleg¹,Didenko Sergey¹,Osipov Yuri¹,Kourova Natalya¹,Akhmerov Yuri²,Marenkin Sergey¹

Affiliation:

1. JSC “Optron”Moscow105187Russian Federation

2. National University of Science and Technology “MISiS”119313Moscow, P.O. Box 409Russian Federation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800371

Reference43 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Selective area epitaxy of semipolar InGaN/GaN multiple quantum wells on GaN microfacets using crossover stripe patterns

3. Development and prospects of nitride materials and devices with nonpolar surfaces

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Macrodefects investigation in a-GaN films;AIP Advances;2022-02-01

2. Phase equilibria investigation in the Cd3As2-MnAs-CdAs2 system;PROCEEDINGS OF THE II INTERNATIONAL CONFERENCE ON ADVANCES IN MATERIALS, SYSTEMS AND TECHNOLOGIES: (CAMSTech-II 2021);2022

3. InGaAs/InP SWIR unipolar barrier photodetector structure;Optical Components and Materials XVIII;2021-03-05

4. AlGaP LEDs optimization;Physics and Simulation of Optoelectronic Devices XXIX;2021-03-05

5. In0.01Ga0.99As: (Zn / Si) layers growth with special parameters for solar cells;AIP Conference Proceedings;2021