InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates-Reference-Cited by-同舟云学术

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Published:2001-02 Issue:4 Volume:222 Page:701-705
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Aderhold J.,Davydov V.Yu.,Fedler F.,Klausing H.,Mistele D.,Rotter T.,Semchinova O.,Stemmer J.,Graul J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Electrical transport in p-GaN, n-InN and n-InGaN

2. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

3. Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy

4. Experimental and theoretical studies of phonons in hexagonal InN

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