Electrical transport in p-GaN, n-InN and n-InGaN-Reference-Cited by-同舟云学术

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Electrical transport in p-GaN, n-InN and n-InGaN

Published:1996-09 Issue:9 Volume:39 Page:1289-1294
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Geerts Wim,Mackenzie J.D.,Abernathy C.R.,Pearton S.J.,Schmiedel Thomas

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Mechanism of Yellow Luminescence in GaN

4. Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance

5. Electron transport mechanism in gallium nitride

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1. Indium defect complexes in (In _x Ga_1−x)₂O₃: a combined experimental and hybrid density functional theory study;Journal of Physics D: Applied Physics;2024-01-16

2. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures;Applied Physics Letters;2017-01-16

3. InGaN/GaN Multiple Quantum Well Solar Cells with Good Open-Circuit Voltage and Concentrator Action;Japanese Journal of Applied Physics;2012-09-01

4. InGaN/GaN Multiple Quantum Well Solar Cells with Good Open-Circuit Voltage and Concentrator Action;Japanese Journal of Applied Physics;2012-08-27

5. Effects of growth conditions on the acceptor activation of Mg-doped p-GaN;Materials Chemistry and Physics;2012-04

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