Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122520
Reference22 articles.
1. III–V nitride based light-emitting devices
2. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
3. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
4. Raman spectra of indium nitride thin films grown by microwave‐excited metalorganic vapor phase epitaxy on (0001) sapphire substrates
5. Preparation and optical properties of Ga1−xInxN thin films
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