Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation-Reference-Cited by-同舟云学术

Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation

Published:2015 Issue:22 Volume:5 Page:17325-17335
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Ganesh Vattikondala¹²³⁴⁵,Alizadeh Mahdi¹²³⁴⁵,Shuhaimi Ahamad¹²³⁴⁵,Pandikumar Alagarsamy¹²³⁴⁵,Goh Boon Tong¹²³⁴⁵,Huang Nay Ming¹²³⁴⁵,Rahman Saadah Abdul¹²³⁴⁵

Affiliation:

1. Low Dimensional Materials Research Centre

2. Department of Physics

3. Faculty of Science

4. University of Malaya

5. 50603 Kuala Lumpur

Abstract

Indium nitride thin films were grown at different RF powers using a plasma-assisted reactive evaporation method and their electrochemical properties were investigated.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA16258G

Reference54 articles.

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4. Self-assembled GaN hexagonal micropyramid and microdisk

5. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

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