Role of growth pressure on Structural, optical and electrical properties of indium Nitride thin films prepared by modified activated reactive evaporation-Reference-Cited by-同舟云学术

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Role of growth pressure on Structural, optical and electrical properties of indium Nitride thin films prepared by modified activated reactive evaporation

Published:2022 Issue: Volume:65 Page:163-167
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Biju K.P.

Publisher

Elsevier BV

Subject

General Medicine

Reference20 articles.

1. A review;Strite;J. Vac. Sci. Technol. B,1992

2. Indium nitride (InN): A review on growth, characterization, and properties;Bhuiyan;J. Appl. Phys.,2003

3. Electron transport in wurtzite indium nitride;O’Leary;J. Appl. Phys.,1998

4. Preparation and optical properties of Ga1−xInxN thin films;Osamura;J. Appl. Phys.,1975

5. Some properties of InN films prepared by reactive evaporation;Trainor;J. of Electronic Materials,1974

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