Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. Growth of M-plane GaN(100) on γ-LiAlO
2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
3. Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
4. Dislocation-Freem-Plane InGaN/GaN Light-Emitting Diodes onm-Plane GaN Single Crystals
5. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes
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1. Topics;Advanced Optical Spectroscopy Techniques for Semiconductors;2023
2. Epitaxial growth and characterization of non-polara-plane AlGaN films with MgN/AlGaN insertion layers;Journal of Physics: Conference Series;2017-06
3. Epitaxial growth and characterization of nonpolara-plane AlGaN films with MgN/AlGaN insertion layers;Applied Physics Express;2017-03-29
4. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates;Science and Technology of Advanced Materials;2016-11-10
5. Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire;Journal of Applied Physics;2014-03-21
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