Growth of M-plane GaN(100) on γ-LiAlO
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
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2. Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy;AIP Advances;2018-07
3. V-shaped semipolar InGaN/GaN multi-quantum-well light-emitting diodes directly grown on c-plane patterned sapphire substrates;physica status solidi (a);2017-06-16
4. Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N;Progress in Crystal Growth and Characterization of Materials;2017-06
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