Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370686
Reference47 articles.
1. Growth of GaN by ECR-assisted MBE
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3. Properties of VPE‐grown GaN doped with Al and some iron‐group metals
4. Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions
5. Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
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