Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359474
Reference15 articles.
1. GaN, AlN, and InN: A review
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
5. A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma‐assisted molecular‐beam epitaxy
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