Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate
Author:
Funder
NSERC
FRQNT
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference49 articles.
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3. Band parameters for nitrogen-containing semiconductors;Vurgaftman;J. Appl. Phys.,2003
4. III-nitride Ultraviolet Emitters;Kneissl,2016
5. Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy;Moustakas;MRS Communications,2016
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1. Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates;Semiconductors;2024-02
2. Direct Observation of Al Migration Enhancement by Changing the Al and N Source Relative Position in the Molecular Beam Epitaxy of AlGaN Nanowires;Crystal Growth & Design;2023-04-10
3. Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template;ACS Applied Optical Materials;2023-03-14
4. Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon;ST PETER POLY U J-PH;2023
5. Molecular Beam Epitaxy of AlGaN Epilayers on Si for Vertical Deep Ultraviolet Light-Emitting Diodes;ECS Journal of Solid State Science and Technology;2022-11-01
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