Abstract
AbstractThis paper reviews progress in ultraviolet (UV) optoelectronic devices based on AIGaN films and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A growth mode, leading to band-structure potential fluctuations and resulting in AIGaN multiple QWs with internal quantum efficiency as high as 68%, is discussed. Atomic ordering in these alloys, which is different from that observed in traditional III-V alloys, and its effect on device performance is also addressed. Finally, progress in UV-light-emitting diodes, UV lasers, UV detectors, electroabsorption modulators, and distributed Bragg reflectors is presented.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
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