Effect of substrate nitridation and a buffer layer on the growth of a non-polar a-plane GaN epitaxial layer on an r-plane sapphire substrate by laser molecular beam epitaxy

Abstract

High density aligned GaN nanorods are obtained on r-plane sapphire with substrate nitridation by Laser MBE. In contrast, a flat surface a-plane GaN epitaxial layer is achieved on r-plane sapphire without nitridation using GaN/AlN buffer by Laser MBE.