High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolarm-plane Bulk GaN Substrate-Reference-Cited by-同舟云学术

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High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolarm-plane Bulk GaN Substrate

Published:2007-10-12 Issue:No. 40 Volume:46 Page:L960-L962
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iso Kenji,Yamada Hisashi,Hirasawa Hirohiko,Fellows Natalie,Saito Makoto,Fujito Kenji,DenBaars Steven P.,Speck James S.,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference17 articles.

1. Ultra-High Efficiency White Light Emitting Diodes

2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

3. Electric field dependence of optical absorption near the band gap of quantum-well structures

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

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