High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE-Reference-Cited by-同舟云学术

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High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE

Published:2024-04 Issue: Volume:368 Page:115103
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Aggarwal Vishnu,Kumar Rahul,Varshney Urvashi,Gautam Sudhanshu,Pradhan Bipul Kumar,Yadav Brajesh S.,Sharma Sandeep,Ganesan Ramakrishnan,Gupta Govind,Kumar Muthusamy Senthil,Kushvaha Sunil Singh

Funder

University Grants Commission

Science and Engineering Research Board

Council of Scientific and Industrial Research, India

National Physical Laboratory

Publisher

Elsevier BV

Reference47 articles.

1. Gas detection using portable deep-UV absorption spectrophotometry: a review;Khan;Sensors,2019

2. Ultrafast self-powered visible blind UV photodetectors based on MgZnO vertical Schottky junction in crossbar geometry;Das;Sens. Actuator A Phys.,2023

3. Effects of clouds and stratospheric ozone depletion on ultraviolet radiation trends;Lubin;Nature,1995

4. Low-dimensional wide-bandgap semiconductors for UV photodetectors;Li;Nat. Rev. Mater.,2023

5. III-nitrides and UV detection;Muñoz;J. Phys. Condens. Matter,2001

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