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Springer International Publishing
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https://link.springer.com/content/pdf/10.1007/978-3-031-19722-2_7
Reference97 articles.
1. Renucci, J. B., Tyte, R. N., & Cardona, M. (1975). Resonant Raman scattering in silicon. Physical Review B, 11, 3885.
2. Yoshikawa, M., Murakami, M., Matsuda, K., Sugie, R., Ishida, H., & Shimizu, R. (2006). Stress characterization of Si by a scanning Near-field optical Raman microscope with spatial resolution and with penetration depth at the nanometer level, using resonant Raman scattering. Japanese Journal of Applied Physics, 45, L486.
3. Yoshikawa, M., & Murakami, M. (2006). Stress characterization of Si by near-field raman microscope using resonant scattering. Applied Spectroscopy, 60, 479.
4. Yoshikawa, M., Murakami, M., & Ishida, H. (2007). Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100 nm spatial resolution and 5 nm depth resolution, using ultraviolet resonant Raman scattering. Applied Physics Letters, 91, 131908.
5. Yoshikawa, M., Murakami, M., & Ishida, H. (2008). Highly sensitive detection of near-field Raman scattered light from strained Si/SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering. Applied Physics Letters, 92, 091903.
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