Highly sensitive detection of near-field Raman scattered light from strained Si∕SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering-Reference-Cited by-同舟云学术

Highly sensitive detection of near-field Raman scattered light from strained Si∕SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering

Published:2008-03-03 Issue:9 Volume:92 Page:091903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoshikawa M.,Murakami M.,Ishida H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2870201

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4. Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopy

5. M. Yoshikawa and N. Nagai, in Handbook of Vibrational Spectroscopy, edited by J. M. Chalmers and P. R. Griffiths (Wiley, Chichester, 2002), p. 2593.

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