Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100nm spatial resolution and 5nm depth resolution, using ultraviolet resonant Raman scattering-Reference-Cited by-同舟云学术

Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100nm spatial resolution and 5nm depth resolution, using ultraviolet resonant Raman scattering

Published:2007-09-24 Issue:13 Volume:91 Page:131908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoshikawa M.,Murakami M.,Ishida H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2780114

Reference18 articles.

1. Extended Abstracts of the 18th Conference on the Solid State Device and Materials;Kambayashi S.,1986

2. Bipolar Circuits and Technology Meeting;Katsumata Y.,1991

3. Extended Abstracts of the 19th Conference on the Solid State Device and Materials;Nadahara S.,1987

4. Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopy

5. M. Yoshikawa and N. Nagai, in Handbook of Vibrational Spectroscopy, edited by J. M. Chalmers and P. R. Griffiths (Wiley, Chichester, 2002), Vol. 4, p. 2593.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope;Journal of Raman Spectroscopy;2024-05-25

2. Topics;Advanced Optical Spectroscopy Techniques for Semiconductors;2023

3. Standardizing resolution definition in scanning helium microscopy;Ultramicroscopy;2022-03

4. Stress Characterization of the Interface Between Thermal Oxide and the 4H-SiC Epitaxial Layer Using Near-Field Optical Raman Microscopy;Applied Spectroscopy;2019-07-22

5. Infrared Spectroscopy and Raman Spectroscopy of Semiconductor;Encyclopedia of Analytical Chemistry;2018-09-12