Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868692
Reference19 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes
3. Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire
4. The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates
5. Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
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2. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates;Science and Technology of Advanced Materials;2016-11-10
3. Polar, semi- and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties;Optical and Quantum Electronics;2016-01-29
4. Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers;Crystal Growth & Design;2016-01-12
5. Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory;Physical Review B;2015-12-10
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