Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers-Reference-Cited by-同舟云学术

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

Published:2016-01-12 Issue:2 Volume:16 Page:1010-1016
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zhu Tongtong¹,Ding Tao¹²,Tang Fengzai¹,Han Yisong¹,Ali Muhammad³,Badcock Tom³,Kappers Menno J.¹,Shields Andrew J.³,Smoukov Stoyan K.¹,Oliver Rachel A.¹

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

2. Nanophotonics Centre, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom

3. Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom

Funder

Engineering and Physical Sciences Research Council

European Research Council

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b01560

Reference35 articles.

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2. Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes

3. Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

4. Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes

5. Defect reduction in non-polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire

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