Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (112̄2) GaN templates and their correlations

Author:

Wu Zhengyuan12345ORCID,Shih Tienmo67895,Li Jinchai67895ORCID,Tian Pengfei12345,Liu Ran12345,Kang Junyong67895,Fang Zhilai12345ORCID

Affiliation:

1. Engineering Research Center of Advanced Lighting Technology

2. Ministry of Education, & Academy for Engineering and Technology

3. Fudan University

4. Shanghai 200433

5. China

6. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices

7. Department of Physics

8. Xiamen University

9. Xiamen 361005

Abstract

Asymmetric island sidewall growth (AISG) is employed to reduce the threading defect density and to modify the surface/interface properties of semipolar GaN templates and InGaN/GaN quantum wells (QWs).

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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