Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (112̄2) GaN templates and their correlations-Reference-Cited by-同舟云学术

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (112̄2) GaN templates and their correlations

Published:2018 Issue:14 Volume:20 Page:2053-2059
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wu Zhengyuan¹²³⁴⁵^ORCID,Shih Tienmo⁶⁷⁸⁹⁵,Li Jinchai⁶⁷⁸⁹⁵^ORCID,Tian Pengfei¹²³⁴⁵,Liu Ran¹²³⁴⁵,Kang Junyong⁶⁷⁸⁹⁵,Fang Zhilai¹²³⁴⁵^ORCID

Affiliation:

1. Engineering Research Center of Advanced Lighting Technology

2. Ministry of Education, & Academy for Engineering and Technology

3. Fudan University

4. Shanghai 200433

5. China

6. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices

7. Department of Physics

8. Xiamen University

9. Xiamen 361005

Abstract

Asymmetric island sidewall growth (AISG) is employed to reduce the threading defect density and to modify the surface/interface properties of semipolar GaN templates and InGaN/GaN quantum wells (QWs).

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE00151K

Reference20 articles.

1. Solid-State Light Sources Getting Smart

2. Group III-nitride lasers: a materials perspective

3. LEDs for energy efficient greenhouse lighting

4. Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal–Organic Chemical Vapor Deposition

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