High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire-Reference-Cited by-同舟云学术

High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire

Published:2020-04 Issue:4 Volume:257 Page:1900565
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Song Jie¹²^ORCID,Han Jung¹

Affiliation:

1. Department of Electrical EngineeringYale University New Haven CT 06520 USA

2. State Key Laboratory of Transient Optics and PhotonicsXi'an Institute of Optics and Precision MechanicsChinese Academy of Sciences Xi'an 710119 China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900565

Reference42 articles.

1. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

2. Strain-induced polarization in wurtzite III-nitride semipolar layers

3. Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

4. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

5. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

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