Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire
Author:
Affiliation:
1. Saphlux Inc, Branford, Connecticut 06405, United States
Funder
Saphlux Inc.
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b11316
Reference52 articles.
1. Strain-induced polarization in wurtzite III-nitride semipolar layers
2. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
3. High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes
4. High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
5. High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
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