X-ray characterisation of the basal stacking fault densities of (112̄2) GaN-Reference-Cited by-同舟云学术

X-ray characterisation of the basal stacking fault densities of (112̄2) GaN

Published:2021 Issue:35 Volume:23 Page:6059-6069
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Pristovsek Markus¹^ORCID,Frentrup Martin²,Zhu Tongtong²,Kusch Gunnar²^ORCID,Humphreys Colin J.²

Affiliation:

1. Center for Integrated Research of Future Electronics, Institute for Materials and Systems for Sustainability, Nagoya University, 1 Furo-cho, Chikusa-Ku, Nagoya, 464-8603, Japan

2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK

Abstract

X-ray diffraction reciprocal space maps in the [1̄21̄0] zone show basal plane stacking (BSF) fold related long diffuse scattering tails along [0001]. The BSF density correlates with the Lorentzian area of the reflection peak.

Funder

Seventh Framework Programme

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00627D

Reference34 articles.

1. Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE

2. Reduction of dislocations in a (112¯2)GaN grown by selective MOVPE on (113)Si