Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=9/a=091001/pdf
Reference17 articles.
1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
2. Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes
3. Epitaxial growth and optical properties of semipolar (112¯2) GaN and InGaN∕GaN quantum wells on GaN bulk substrates
4. High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolarm-plane Bulk GaN Substrate
5. High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
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4. Direct growth of GaN on sapphire substrate via polarity transition from N- to Ga-polar using only hydride vapor phase epitaxy;Japanese Journal of Applied Physics;2021-12-15
5. X-ray characterisation of the basal stacking fault densities of (112̄2) GaN;CrystEngComm;2021
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