Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire-Reference-Cited by-同舟云学术

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Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire

Published:2012-02 Issue:1 Volume:341 Page:27-33
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Leung Benjamin,Sun Qian,Yerino Christopher,Zhang Yu,Han Jung,Hyun Kong Bo,Koun Cho Hyung,Liao Kuan-Yung,Li Yun-Li

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Strain-induced polarization in wurtzite III-nitride semipolar layers

2. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

3. Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

4. Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

5. Improving microstructural quality of semipolar (112̱2) GaN on m-plane sapphire by a two-step growth process

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation mechanism of (10−13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy;CrystEngComm;2023

2. Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire;Journal of Electronic Materials;2021-05-21

3. X-ray characterisation of the basal stacking fault densities of (112̄2) GaN;CrystEngComm;2021

4. Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers;Applied Physics Reviews;2020-12

5. High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire;physica status solidi (b);2020-04

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