Formation mechanism of (10−13) AlN twins on <i>m</i>-plane sapphire substrates at high temperature by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Formation mechanism of (10−13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy

Published:2023 Issue:39 Volume:25 Page:5560-5564
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Xu¹^ORCID,Salwa Almazroi¹^ORCID,Liu Ting¹,Lu Yong¹,Zhang Ji-Cai¹²^ORCID

Affiliation:

1. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China

2. State Key Laboratory of Chemical Resource Engineering, Laboratory of Biomedical Materials and Key Lab of Biomedical Materials of Natural Macromolecules (Ministry of Education), Beijing University of Chemical Technology, Beijing 100029, China

Abstract

(10−13) AlN twin structures were grown on m-plane sapphire substrates with high-temperature nitridation by hydride vapor phase epitaxy.

Funder

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Central University Basic Research Fund of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00673E

Reference31 articles.

1. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing

2. The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition

3. In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition

4. Influence of thickness on strain state and surface morphology of AlN grown by HVPE

5. Effects of RF inductively coupled plasma ion source on the microstructure and mechanical properties of Ti–Al–N nanocrystalline films