The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition-Reference-Cited by-同舟云学术

The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition

Author:

Jiang Ke¹²³⁴⁵,Sun Xiaojuan¹²³⁴,Ben Jianwei¹²³⁴⁵,Jia Yuping¹²³⁴,Liu Henan¹²³⁴,Wang Yong¹²³⁴,Wu You¹²³⁴⁵,Kai Cuihong¹²³⁴⁵,Li Dabing¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications

2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

3. Changchun 130033

4. People's Republic of China

5. University of Chinese Academy of Sciences

Abstract

The defect evolution in homoepitaxial AlN grown by high-temperature metal–organic chemical vapor deposition on AlN/sapphire templates was studied.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference52 articles.

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