Reduction of dislocations in a (112¯2)GaN grown by selective MOVPE on (113)Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
3. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
4. Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
5. Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy
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1. X-ray characterisation of the basal stacking fault densities of (112̄2) GaN;CrystEngComm;2021
2. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017
3. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials;Progress in Crystal Growth and Characterization of Materials;2016-06
4. MOCVD of Nitrides;Handbook of Crystal Growth;2015
5. Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon;physica status solidi (b);2014-12-05
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