Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1493220
Reference18 articles.
1. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
3. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
4. Giant electric fields in unstrained GaN single quantum wells
5. Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
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