Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2172159
Reference23 articles.
1. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
2. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy
3. Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
4. Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides
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