Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD-Reference-Cited by-同舟云学术

Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

Author:

Zubialevich Vitaly Z.¹^ORCID,McLaren Mathew²^ORCID,Pampili Pietro¹^ORCID,Shen John³,Arredondo-Arechavala Miryam²,Parbrook Peter J.¹⁴^ORCID

Affiliation:

1. Tyndall National Institute, University College Cork, Cork T12 R5CP, Ireland

2. Centre for Nanostructured Media, School of Mathematics and Physics, Queen's University, Belfast BT7 1NN, Northern Ireland

3. Electrical and Computer Engineering Department, Illinois Institute of Technology, Chicago, Illinois 60616, USA

4. School of Engineering, University College Cork, Cork, Ireland

Funder

Department for the Economy Northern Ireland

National Science Foundation

Science Foundation Ireland

Higher Education Authority

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference43 articles.

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