Geometrically Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN
Author:
Affiliation:
1. Tyndall National Institute, University College Cork, Lee Maltings Dyke Parade, Cork T12 R5CP, Ireland
2. School of Engineering, University College Cork, Western Road, Cork, Ireland
Funder
Science Foundation Ireland
H2020 Marie Sklodowska-Curie Actions
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00235
Reference20 articles.
1. N-polar III-nitride transistors
2. Polarity Control in Group-III Nitrides beyond Pragmatism
3. Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
4. Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
5. Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates
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