Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation-Reference-Cited by-同舟云学术

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Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

Published:2000-03 Issue:4 Volume:210 Page:435-443
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zauner A.R.A,Weyher J.L,Plomp M,Kirilyuk V,Grzegory I,van Enckevort W.J.P,Schermer J.J,Hageman P.R,Larsen P.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

2. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

3. Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

4. Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

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4. Growth of N-Polar (0001) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire;Crystals;2023-07-07

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