Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)-Reference-Cited by-同舟云学术

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Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Published:1999-08 Issue:4 Volume:204 Page:419-428
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Weyher J.L.,Brown P.D.,Zauner A.R.A.,Müller S.,Boothroyd C.B.,Foord D.T.,Hageman P.R.,Humphreys C.J.,Larsen P.K.,Grzegory I.,Porowski S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference40 articles.

1. Inversion domains in GaN grown on sapphire

2. Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates

3. Domain boundaries in epitaxial wurtzite GaN

4. Formation Mechanism of Nanotubes in GaN

5. Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

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