Domain boundaries in epitaxial wurtzite GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118520
Reference14 articles.
1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
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3. Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy
4. Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy
5. Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy
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