Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions-Reference-Cited by-同舟云学术

Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Published:2022-02-23 Issue:6 Volume:259 Page:2100221
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Okuno Koji¹^ORCID,Mizutani Koichi¹,Iida Kazuyoshi¹,Ohya Masaki¹,Sone Naoki²³,Lu Weifang³,Okuda Renji³,Miyamoto Yoshiya³,Ito Kazuma³,Kamiyama Satoshi³,Takeuchi Tetsuya³,Iwaya Motoaki³,Akasaki Isamu³⁴

Affiliation:

1. Life Solution Engineering Division 1 Toyota Gosei Co., Ltd Aichi 492-8542 Japan

2. Research & Development Department Koito Manufacturing Co., Ltd Shizuoka 424-8764 Japan

3. Department of Materials Science and Engineering Meijo University Aichi 468-8502 Japan

4. Akasaki Research Center Nagoya University Aichi 464-8603 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100221

Reference83 articles.

1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy

2. The Controlled Growth of GaN Nanowires

3. The nanorod approach: GaN NanoLEDs for solid state lighting

4. GaN based nanorods for solid state lighting

5. Growth ofc‐axis oriented gallium nitride thin films on an amorphous substrate by the liquid‐target pulsed laser deposition technique

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