Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy

Published:1995-01-02 Issue:1 Volume:66 Page:37-39
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tanaka Satoru,Kern R. Scott,Davis Robert F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114173

Reference21 articles.

Cited by 142 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Growth-microstructure-thermal property relations in AlN thin films;Journal of Applied Physics;2022-11-07

3. Reactions of metal chlorides with hexamethyldisilazane: Novel precursors to aluminum nitride and beyond;Journal of the American Ceramic Society;2021-12-15

4. In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms;Crystallography Reports;2021-07

5. Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy;Journal of Applied Physics;2021-02-07

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