Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy-Reference-Cited by-同舟云学术

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

Published:2021-02-07 Issue:5 Volume:129 Page:055304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Breev I. D.¹^ORCID,Likhachev K. V.¹^ORCID,Yakovleva V. V.¹^ORCID,Hübner R.²^ORCID,Astakhov G. V.¹²^ORCID,Baranov P. G.¹,Mokhov E. N.¹^ORCID,Anisimov A. N.¹^ORCID

Affiliation:

1. Ioffe Institute, Politechnicheskaya st. 26, Saint-Petersburg, Russia

2. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstr. 400, Dresden, Germany

Funder

Russian Science Foundation

Bundesministerium für Bildung und Forschung

Helmholtz-Zentrum Dresden-Rossendorf

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0029682

Reference39 articles.

1. Biplanar Epitaxial AlN/SiC/(n, p)SiC Structures for High-Temperature Functional Electronic Devices

2. Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics

3. Phonon dispersion and Raman scattering in hexagonal GaN and AlN

4. Developing silicon carbide for quantum spintronics

5. Room-temperature quantum microwave emitters based on spin defects in silicon carbide

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