In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms-Reference-Cited by-同舟云学术

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In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms

Published:2021-07 Issue:4 Volume:66 Page:570-580
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Rogilo D. I.,Sitnikov S. V.,Rodyakina E. E.,Petrov A. S.,Ponomarev S. A.,Sheglov D. V.,Fedina L. I.,Latyshev A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1134/S1063774521040192.pdf

Reference60 articles.

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3. S. Tanaka, R. S. Kern, and R. F. Davis, Appl. Phys. Lett. 66, 37 (1995). https://doi.org/10.1063/1.114173

4. T. Oshima, N. Arai, N. Suzuki, et al., Thin Solid Films 516, 5768 (2008). https://doi.org/10.1016/j.tsf.2007.10.045

5. J.-N. Aqua, I. Berbezier, L. Favre, et al., Phys. Rep. 522, 59 (2013). https://doi.org/10.1016/j.physrep.2012.09.006

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