Affiliation:
1. Department of Electrical and Electronic Engineering Yamaguchi University 2-16-1 Tokiwadai Ube-shi Yamaguchi 755-8611 Japan
2. Materials R&D Lab, Functional Materials Group Japan Fine Ceramics Center 2-4-1Rokuno Atsuta-ku Nagoya 456-8587 Aichi Japan
Abstract
The nitrogen‐polar (N‐polar) AlGaN/AlN structure is expected to have higher carrier density than conventional metal‐polar AlGaN/GaN electronic devices, and the AlN substrate offers various advantages, such as high breakdown voltage and high‐temperature operation. Herein, a N‐polar AlGaN/AlN‐heterostructured field‐effect transistor (FET) with static FET characteristics is successfully fabricated. However, the drain current density, IDS, remains significantly small. This study aims to improve IDS by doping Si in the topmost AlGaN channel layer under various conditions.
Funder
New Energy and Industrial Technology Development Organization
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials