MOVPE growth of AlN and AlGaN films on N-polar annealed and sputtered AlN templates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference38 articles.
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3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,2000
4. Recent progress in metal-organic chemical vapor deposition of (000–1) N-polar group-III nitrides;Keller;Semicond. Sci. Technol.,2014
5. Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm;Lemettinen;IEEE Elect. Dev. Lett.,2019
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature;Materials;2023-11-30
2. Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing;Materials Science in Semiconductor Processing;2023-11
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