Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides-Reference-Cited by-同舟云学术

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

Published:2014-08-20 Issue:11 Volume:29 Page:113001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Keller Stacia,Li Haoran,Laurent Matthew,Hu Yanling,Pfaff Nathan,Lu Jing,Brown David F,Fichtenbaum Nicholas A,Speck James S,DenBaars Steven P,Mishra Umesh K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=11/a=113001/pdf

Reference189 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

2. The Use of Metal-Organics in the Preparation of Semiconductor Materials

3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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