Realization of N-polarity GaN films on graphene/SiC substrates by interfacial atomic manipulation-Reference-Cited by-同舟云学术

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Realization of N-polarity GaN films on graphene/SiC substrates by interfacial atomic manipulation

Published:2024-11 Issue: Volume:672 Page:160849
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yu Jiaqi^ORCID,Deng Gaoqiang,Niu Yunfei,Zhang Lidong,Wang Yusen,Ma Haotian,Yang Shixu,Zuo Changcai,Zhang Baolin,Shi Zhiming,Duan Bin,Li Dabing,Zhang Yuantao^ORCID

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference32 articles.

1. Technological breakthroughs in chip fabrication, transfer, and color conversion for high-performance micro-LED displays;Ryu;Adv. Mater.,2023

2. Electrically driven mid-submicrometre pixilation of InGaN micro-light-emitting diode displays for augmented-reality glasses;Park;Nat. Photonics,2021

3. Band gap of hexagonal InN and InGaN alloys;Davydov;Phys. Stat. Sol. (b),2002

4. Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence;Hocker;J. Appl. Phys.,2016

5. High wall-plug efficiency blue III-nitride LEDs designed for low current density operation;Kuritzky;Opt. Express,2017

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