Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120163
Reference10 articles.
1. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
2. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
3. Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
4. Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
5. Structural characterization of the (111) surfaces of CdZnTe and HgCdTe epilayers by x-ray photoelectron diffraction
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