Affiliation:
1. Institute of Semiconductors, Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
3. Xiamen University
Abstract
We demonstrate the InGaN/GaN-based monolithic micro-pyramid white (MPW) vertical LED (VLED) grown on (−201)-oriented β-Ga2O3 substrate by selective area growth. The transmission electron microscopy (TEM) reveals an almost defect-free GaN pyramid structure on (10–11) sidewalls, including stacked dual-wavelength multi-quantum wells (MQWs). From the electroluminescence (EL) spectra of the fabricated MPW VLED, a white light emission with a high color rendering index (CRI) of 97.4 is achieved. Furthermore, the simulation shows that the light extraction efficiency (LEE) of the MPW VLED is at least 4 times higher compared with the conventional planar LED. These results show that the MPW VLED grown on β-Ga2O3 has great potential for highly efficient phosphor-free white light emission.
Funder
National Key Research and Development Program of China
Basic and Applied Basic Research Foundation of Guangdong Province
National Natural Science Foundation of China
Beijing Municipal Natural Science Foundation
Beijing Science and Technology Planning Project
Subject
Atomic and Molecular Physics, and Optics