The stacking fault annihilation in <i>a</i>-plane AlN during high-temperature annealing-Reference-Cited by-同舟云学术

The stacking fault annihilation in a-plane AlN during high-temperature annealing

Published:2023 Issue:13 Volume:25 Page:1903-1909
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Sun Xiaojuan¹²^ORCID,Sui Jiaen¹²,Ben Jianwei¹²,Zang Hang¹²,Jiang Ke¹²,Zhang Shanli¹²,Lv Shunpeng¹²,Shi Zhiming¹²^ORCID,Wu Tong¹²,Li Dabing¹²^ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

The basal stacking fault (BSF) annihilation mechanism in a-plane AlN during HTA is studied both experimentally and theoretically.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D2CE01654K

Reference38 articles.

1. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

2. Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates

3. Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

4. Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates

5. Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

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