The stacking fault annihilation in a-plane AlN during high-temperature annealing

Author:

Sun Xiaojuan12ORCID,Sui Jiaen12,Ben Jianwei12,Zang Hang12,Jiang Ke12,Zhang Shanli12,Lv Shunpeng12,Shi Zhiming12ORCID,Wu Tong12,Li Dabing12ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

The basal stacking fault (BSF) annihilation mechanism in a-plane AlN during HTA is studied both experimentally and theoretically.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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