Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates-Reference-Cited by-同舟云学术

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Published:2021 Issue:5 Volume:23 Page:1201-1206
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Sun Yuanhao¹²³⁴⁵,Xu Fujun¹²³⁴⁵^ORCID,Zhang Na¹²³⁴⁵,Lang Jing¹²³⁴⁵,Wang Jiaming¹²³⁴⁵,Liu Baiyin¹²³⁴⁵,Wang Liubing¹²³⁴⁵,Xie Nan¹²³⁴⁵,Fang Xuzhou¹²³⁴⁵,Kang Xiangning¹²³⁴⁵,Qin Zhixin¹²³⁴⁵,Yang Xuelin¹²³⁴⁵,Wang Xinqiang¹²³⁴⁵,Ge Weikun¹²³⁴⁵,Shen Bo¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics

2. School of Physics

3. Peking University

4. Beijing 100871

5. China

Abstract

Growth of AlGaN-based multiple quantum wells (MQWs) with an IQE > 80% at room temperature has been realized on nano-patterned sapphire substrates. A DUV-LED device is then fabricated taking such high IQE MQWs as the active region.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01491E

Reference43 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides